Abstract
In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm−2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm2 V−1 s−1, this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed.
Highlights
Organic semiconductors have a low charge carrier mobility μ in comparison to inorganic semiconductors, reducing transconductance and switching speed in transistors
It has been shown that organic semiconductors are capable to sustain enormous current densities in the vertical direction towards kA cm−2 for diodes[12,13] and up to MA cm−2 for simple devices with thin single layers[14]
We demonstrate an organic permeable-base transistor (OPBT) which basically resembles the layer stack of a vertical diode with an embedded base electrode in the middle of the stack to control the current flow perpendicular to the substrate
Summary
Organic semiconductors have a low charge carrier mobility μ in comparison to inorganic semiconductors, reducing transconductance and switching speed in transistors. They offer great potential for flexible electronics due to simple processing techniques and carbon-based materials[1,2,3,4]. Optimized transistors with short channel lengths reach current densities of 1 to 20 A cm−2 and a transit frequency normalized to the operation voltage of about 1 to 2 MHz V−1, cf ref. We demonstrate an organic permeable-base transistor (OPBT) which basically resembles the layer stack of a vertical diode with an embedded base electrode in the middle of the stack to control the current flow perpendicular to the substrate. We demonstrate here transistors with record high current densities above 1 kA cm−2 at low voltages, accompanied by excellent high-frequency characteristics
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