Organic polymeric thin-film transistors fabricated by selective dewetting

Abstract

Thin-film transistors (TFTs) of polymeric semiconductors were fabricated using selective dewetting in the patterning process. The process consists of: (i) patterning the wettability of the substrate using a protective layer of printed wax and a self-assembled monolayer, and (ii) patterning a polymeric semiconductor by selective dewetting from an organic solution. The method has been used to fabricate small arrays of TFTs with a regioregular poly(thiophene) and poly(9-9′-dioctyl-fluorene-co-bithiophene). The TFTs exhibited mobilities of 0.5–1.0×10−3 cm2 V−1 s−1 and on-to-off ratios on the order of 104.