Abstract
Defect etching is a well-established method used to reveal different kinds of crystalline defects in semiconducting materials. Most of the etch solutions used today have two disadvantages. They contain hexavalent chromium which is highly toxic and they are not suitable for application on thin films. There is a demand for environmentally friendly etch solutions which can also be used for new materials like SOI. Due to their properties Organic Peracid Etches (OPE), mixtures which contain a short-chain alkanoic acid like acetic or propionic acid, hydrogen peroxide and hydrofluoric acid are suitable for defect delineation in thin and very thin (<50 nm) films. Such solutions were also tested on CZ and FZ silicon substrates. In this case characteristic square-shaped etch figures caused by D-defects (COPs) were found after etching.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
