Abstract
We demonstrated a vertically stacked complementary thin-film transistor inverter (VS-CTFT inverter) for the purpose of maximizing potentials beyond logic applications by including photo-gating and ferroelectric memory operation with properly selected organic and oxide materials. For our VS-CTFT inverter for logic and photo-gating, we used a thermally-evaporated p-channel pentacene layer, sputter-deposited n-channel GaZnSn-based oxide (GZTO), and atomic layer deposited (ALD) Al 2O 3 dielectric. As a more advanced hybrid approach, we also adopted a ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF–TrFE)] layer for a CTFT nonvolatile memory inverter with a pentacene memory TFT which is vertically stacked on a top-gate GZTO TFT. Our VS-CTFT inverter nicely displays effective photo- and electrical-gating with a high voltage gain, dynamically operating in the low-voltage regime of 3, 5, and 8 V. The ferroelectric memory inverter as an ultimate hybrid device form demonstrates promising retention properties as triggered by ±20 V gate pulses.
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