Abstract
Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.
Highlights
Organic electronic devices, such as organic field-effect transistors (OFETs) [1], organic light-emitting diodes [2], organic photovoltaic cells, and chemical and photo sensors [3, 4], have been developed as a result of intense research in both industrial and academic sectors
In order to overcome those problems, recent research has focused on developing discrete charge trapping sites, including charge-trap dielectrics, such as silicon-oxide-nitride-oxide-silicon (SONOS) [22,23,24,25] and organic electrets [16] or nanocrystal (NC)-embedded dielectric layers, i.e., nano-floating-gate (NFG) memory devices with metal nanoparticles (NPs) and organic/inorganic nano-materials [26,27,28]
The results showed that the memory window was increased from 11 to 14.6 V, corresponding to increasing the number of charge trapping layers from two to three
Summary
Organic electronic devices, such as organic field-effect transistors (OFETs) [1], organic light-emitting diodes [2], organic photovoltaic cells, and chemical and photo sensors [3, 4], have been developed as a result of intense research in both industrial and academic sectors. To characterize an organic floating-gate memory, many parameters are used, such as the operating voltage, on/ off ratio, memory window, program/erase speed, retention time, and endurance.
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