Abstract
An etching process has been developed for an organic low-k dielectric material, FLARE, that uses a gas chemistry of CH3NH2/N2 in a magnetic neutral loop discharge (NLD) plasma system. The organic low-k etching can provide a normal-taper profile with no micro-trenching and little hard-mask erosion, which are necessary for fabricating Cu/organic low-k damascene multilevel interconnects. Inverse reactive ion etching (RIE) lag was observed under conditions that produced the normal-taper profile. We evaluated the amount of ions and radicals generated in CH3NH2/N2, CH4/N2, and H2/N2 plasmas by means of quadrupole mass spectrometry (QMS) and analyzed films deposited on a bare Si substrate in CH3NH2/N2, CH4/N2, and H2/N2 plasmas by using X-ray photoelectron spectroscopy (XPS). We found that a normal-taper etching profile was obtained when the C/N concentration ratio of the deposited film was about 2–3 in the CH3NH2/N2 plasma.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
