Organic light emitting diodes with p-Si anodes and semitransparent Ce/Au cathodes

Abstract

The Ce (x nm)/Au (15 nm) stacked layers were used as semitransparent cathodes in the top-emission organic light emitting devices (TOLEDs) fabricated on a p-type silicon anodes and substrate, where x varies from 4 to 16. The consequence of the Ce layer thickness on transmittance and the device performance were studied when the organic layers NPB (60 nm)/ALQ (60 nm) were kept unchanged, where NPB was N, N′-bis-(1-naphthl)-diphenyl-1, 1′-biphenyl-4, 4′-diamine, and AlQ is tris-(8-hydroxyquinoline) aluminum. The cathode of Ce (11 nm)/Au (15 nm) has a transparency of 46%, and the TOLED with it achieves the highest luminescence efficiencies: a current efficiency of 0.91 cd/A at 13.7 V and a peak power efficiency of 0.28 lm/W at 9 V. The turn-on voltage is 3.0 V. The Ce/Au cathode is both chemically and electrically stable.