Organic light emitting devices with doped electron transport and hole blocking layers

Abstract

This study reports on heterostructure OLEDs with n-type molecularly doped electron transport layer and hole blocking layer. The influence of doping on the operating voltage and on light emission performances was investigated. The n-type doping molecule is 2-(4-biphenyl)-5-(4- tert-butylphenyl)-1,3,4-oxadiazole (PBD) dispersed into either an 8-(hydroquinoline) aluminum (Alq) electron transport layer (ETL) or a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (Bathocuproine BCP) hole blocking layer (HBL). The typical device structure is glass substrate/indium tin oxide/PEDOT/TPD–F4-TCNQ/Alq–DCM/BCP/Alq/Mg–Ag where Poly(3,4)ethylenedioxythiophene/Polystyrenesulphonate (PEDOT/PSS) is a hole injecting layer, TPD–F4-TCNQ is a hole transport layer (HTL) made of N, N′-Bis(3-methylphenyl)- N, N′-diphenylbenzidine (TPD) doped with 2 wt.% of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) and Alq–DCM is the emitting layer (EML) made of Alq doped with 2 wt.% of 4-dicyanomethylene-2-methyl-6-( p-dimethylaminostyryl)-4 H-pyran (DCM) orange dye. The modified cathode consists in a combination of a BCP HBL and an Alq ETL where BCP or/and Alq were doped with PBD. Lowest operating voltage (3 V for a luminance of 10 Cd/m 2) and brightest devices (6000 Cd/m 2) were obtained with a hole blocking bilayer made of BCP doped with 28 wt.% deposited onto an undoped BCP (each one being 5 nm thick). Adding an undoped Alq layer improved the device current efficiency (4 Cd/A) but is detrimental to the operating voltage (6 V for a luminance of 10 Cd/m 2). In the absence of real n-type doping with organic molecules, our results point out that the design of molecular doped injection layer at the cathode will need for a compromise between high luminance and efficiency on one hand and low operating voltage on the other hand.