Abstract
A new rare earth complex Tb(p-CIBA)3phen was synthesized and introduced into organic light emitting devices (OLEDs) as emitting material. The Tb(p-CIBA)3phen was doped into PVK to improve the film-forming and hole-transporting property. Two kinds of devices were fabricated. The device structure is as the following. Single-layer device: ITO/PVK: Tb(p-CIBA)3phen/LiF/Al; double-layer device: ITO/PVK: Tb(p-CIBA)3phen/AIQ/LiF/Al. The performances of both devices were investigated carefully. We found that the emission of PVK was completely restrained, and only the green emission was observed from the electroluminescence. The full width at half maximum (FWHM) was less than 10 nm. The highest EL brightness of the single-layer device is 25.4 cd/cm2 at a fixed bias of 18 V, and the highest EL brightness of the double-layer device reaches 234.8 cd/cm2 at a voltage of 20 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
