Abstract
Organic-inorganic nanohybrids consisting of mutually complementing conducting and semiconducting materials have received much consideration in the field of resistive switching (RS) memory devices. Herein, we report a simple and cost-effective hydrothermal method for the synthesis of reduced graphene oxide (rGO)-semiconductor (SC) nanohybrid materials by varying the semiconducting component. In this work, the sulfur based semiconductors such as ZnS, CuS and SnS are chosen owing to their unexploited nature in the field of resistive memory devices. The synthesized materials are analysed through optical and structural techniques in order to confirm their successful formation. The synthesized nanohybids are then dispersed into polymer matrices (PMMA) and the RS memory properties are studied through current-voltage measurement. The best result of low set/reset voltage (Vset/Vreset) ∼ – 1.10/+1.29 V, low set/reset power consumption (Pset/Preset) ∼ 4.80 × 10-5/1.16 × 10-4 Wcm-2 and high current ON/OFF ratio (ION/IOFF) ∼ 103 is exhibited by the rGO-CuS nanohybrid. Finally, a conduction mechanism based on the phenomenon of charge carrier trapping and de-trapping is proposed to explain the RS properties.
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