Abstract

We have introduced an organic/inorganic hybrid pn-junction for solar cell applications. Layers of II-VI quantum dots and a metal-phthalocyanine in sequence have been used as n- and p-type materials, respectively, to form a junction. The film of quantum dots has been formed through a layer-by-layer process by replacing the long-chain ligands of the nanoparticles in each ultrathin layer or a monolayer with short-chain ones so that interparticle distance becomes small leading to a decrease in resistance of the quantum dot layer. With indium tin oxide and Au as electrodes, we have formed an inverted sandwiched structure. These electrodes formed ohmic contacts with the neighboring materials. From the current-voltage characteristics of the hybrid heterostructure, we have inferred formation of a depletion region at the pn-junction that played a key role in charge separation and correspondingly a photocurrent in the external circuit. For comparison, we have also formed and characterized Schottky devices based on components of the pn-junction keeping the electrode combination same. From capacitance-voltage characteristics, we have observed that the depletion region of the hybrid pn-junction was much wider as compared to that in Schottky devices based on components of the junction.

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