Organic–inorganic hybrid gate dielectric using bifunctional polyhedral oligomeric silsesquioxane for low‐voltage organic thin‐film transistors

Abstract

AbstractHerein, we report the facile fabrication of rationally designed, high‐performance organic–inorganic hybrid dielectric films constructed by combining a one‐step solution processing and ultraviolet (UV) irradiation under ambient conditions. For the exceptional dielectric properties and facile fabrication process, we use bifunctional polyhedral oligomeric silsesquioxane (POSS) with UV cross‐linking and hydrophobic properties to prepare precursor solutions for the hybrid dielectric films. The bifunctional POSS enables the fabrication of a dense network of hybrid films with UV curing at under ambient conditions. The prepared hybrid gate dielectrics exhibit high capacitance (~300 nF/cm2), exceptional surface smoothness (root‐mean‐square roughness <0.4 nm), and excellent leakage current properties (10−6 A/cm2 at 2 MV/cm). In addition, the hydrophobic function of bifunctional POSS enables the low surface energy of fabricated hybrid gate dielectrics without further treatment. Pentacene‐based organic thin‐film transistors, fabricated with a hybrid dielectric, function well at low voltage with excellent thin‐film transistor performances.