Organic Field‐Effect Transistors

Abstract

This chapter explains the characterization of basic device, evaluation of device parameters, and their relationship to the properties of materials. It describes the most common organic semiconductors, device fabrication technologies and their limitations, and the basic device structures of organic field-effect transistor (OFET) and their specific properties. The threshold voltage represents the minimal voltage required for opening of the channel in the channel region, while the mobility stands for the charge transport properties of organic semiconductor. The charge transport through the OFET device is usually conducted by three processes: carrier injection, transport through the channel and extraction from the channel to the drain electrode. Characterization of electrical properties of device from experimental observations allows an understanding of the behavior of OFETs that is essential for further optimization of devices. The benefits and drawbacks of each device architecture or fabrication method of device were discussed to provide a guide in selection of a particular device. Keywords: carrier injection; charge transport; drain electrode; organic field-effect transistors; organic semiconductors; threshold voltage