Abstract
An electron accumulation-mode operation in organic field-effect transistor (OFET) using a thin film of copper–phthalocyanine (CuPc) and Ca source-drain electrodes was demonstrated. Appearance of the electron accumulation-mode in OFET was ascribed to the lowering of barrier for electron injection at a source electrode. The OFET also showed a p-channel and typical ambipolar transport property. The field-effect electron mobility of 1.0 × 10 −3 cm 2/V s and field-effect hole mobility of 2.5 × 10 −4 cm 2/V s were estimated from the saturation currents above the threshold voltage.
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