Abstract
In this letter, the authors report a reduction in the contact resistance between pentacene and Au source/drain electrodes of organic field-effect transistors (OFETs). By immersing the Au electrodes in a sulfuric acid and hydrogen peroxide mixture, the injection barrier between the Au electrodes and pentacene was lowered by approximately 0.2eV and the contact resistance significantly decreased. The fabricated bottom-contact OFETs revealed a field-effect mobility of more than 0.66cm2∕Vs at a channel length ranging from 3to30μm, which is comparable to that of top-contact OFETs with a 50μm channel length.
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