Organic field effect transistors with ferroelectric hysteresis

Abstract

The ferroelectric copolymer Poly(vinylidene fluoride trifluoroethylene) is used as insulating material for capacitor structures and organic field effect transistors. For capacitors, we find the typical hysteresis in the capacitance–voltage characteristic upon increasing the voltage scan window. A writing process with adequate electric fields causes shifts in the flatband voltage. Based on these results, we fabricate organic transistors with regioregular poly(3-hexylthiophene) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers (100 nm) of spincoated copolymer as gate insulation. The drain source current of the transistor is reversible affected by the polarized gate, which gives opportunities for fabrication of organic nonvolatile memory elements.