Abstract

Organic field-effect transistors with a poly(N-vinylcarbazole) (PVK) buffer layer between the SiO2 and organic semiconductor are fabricated. The PVK layer improves the device performance (mobility of 0.5 cm2 V–1 s–1). The charge stored in the PVK layer can be changed by the starting VGS (see figure, where VGS varies from 0 to –100 V), resulting in the systematic control of the threshold voltage in a device. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/c1476_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

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