Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition.

Abstract

We report on top-gate OFETs with a bilayer gate dielectric comprising an Al2O3 /HfO2 nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm2/(V s) and threshold voltage values of -1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C.