Organic field-effect transistors: predictive control on performance parameters

Abstract

We report the fabrication and characterization of poly(N-methylpyrrole) nanowires electrode junction based back-gated field-effect transistors under varying dopant atmosphere. Influences of the anionic radius of dopants on electrochemical, morphological, spectroscopic and electrical characteristics of synthesized nanowires have been investigated. The FET measurements have revealed highly efficient gate induced modulation of the channel conduction behaviour for all dopant cases and characteristic FET parameters have been estimated. The best observed device in terms of charge carrier mobility (μ) = 4.54 × 10−4 cm2 V−1 s−1 and on-off ratio (Ion/Ioff) = 8.5 × 103 could be characterized with NaOH as dopant. Observed behaviour of the FET devices has been rationally related to the anionic radius of dopants. Plausible interpretation reflects that dopant dimension can be a significant and facile tool for optimized designing of polymeric FETs.