Abstract
A solution-based transparent polymer was investigated as the gate dielectric for organic field-effect transistors (OFETs). Organic thin films (400nm) are readily fabricated by spin-coating a polyhydrazide solution under ambient conditions on the ITO substrates, followed by annealing at a low temperature (120°C). The smooth transparent dielectrics exhibited excellent insulating properties with very low leakage current densities of ∼10−8A/cm2. High performance OFETs with evaporated pentacene as organic semiconductor function at a low operate voltage (−15V). The mobility could reach as high as 0.7cm2/Vs and on/off current ratio up to 104. Solution-processed TIPS-pentacene OFETs also work well with this polymer dielectric.
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