Organic field effect transistor mobility from transient response analysis

Abstract

An electronic method for analyzing the transient response of a pentacene organic field effect transistor at time scales below 100ns is presented with analysis that allows extraction of estimated field-dependent device mobility from the measured carrier velocity. A second technique we propose is the use of T-SPICE simulations of transient response data of the device behavior between ∼100ns and ∼3μs. These results are compared with lower field-effect mobilities extracted from the transient data at 250μs and the dc drain current (Id) versus source-drain voltage (Vds) characteristics in the saturation regime. This trend of decreasing mobility with increasing time is perhaps due to the absence of the bias stress effect at small time scales.