Abstract
In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.
Highlights
Organic memory devices have attracted wide attention in recent years due to their many merits over their inorganic counterparts, such as their low-cost, lightweight, solution processability, and mechanical flexibility characteristics [1–3]
We have demonstrated a strategy to achieve an organic field-effect transistor memory (OFETM) based on a carbon quantum dots (CQDs)/polyvinyl pyrrolidone (PVP)
Hybrid nanolayer as a charge trapping layer, and the operating mechanism is discussed in detail
Summary
Organic memory devices have attracted wide attention in recent years due to their many merits over their inorganic counterparts, such as their low-cost, lightweight, solution processability, and mechanical flexibility characteristics [1–3]. The third type is polymer electret OFETM devices, which use stable, solution processable, and chargeable dielectric materials inserted between the gate insulator layer and the active layer of the OFETs [17]. For many p-type polymer electret OFETM devices, the influence of the negative gate pulse voltage on the transfer characteristic curves is obviously greater than that of the positive gate pulse voltage This phenomenon is due to the high electron barrier between the semiconductor and the polymer electret materials [20]. CQDs have the advantages of low toxicity, environmental friendliness, low cost and simple synthesis methods Due to their excellent optical properties, many studies using CQDs as light-emitting materials for organic light-emitting diodes (OLED) devices have been reported [22,23]. We will report a pentacene-based bottom gate top contact (BGTC) OFETM that uses a CQDs/PVP hybrid nanolayer as the charge trapping layer to realize bidirectional memory characteristics. A large memory window of 8.41 V with a relatively low programming/erasing (P/E) voltage [20] and a data retention time of up to 104 s is realized
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