Abstract
A gigahertz-operable pentacene rectifier enabled by controlled film formation using a self-assembled monolayer (SAM) is demonstrated by Kang et al. in article number 1500282. Pentacene deposited on SAM-treated Au forms an ordered structure, thereby exhibiting much improved electrical characteristics, in contrast with a disordered pentacene structure on bare Au. Moreover, SAM treatment lowers the charge injection barrier, which further improves the device performance.
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