Abstract
Organic electronic synapses (e-synapses) based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/graphene quantum dot (GQD) nanocomposites are fabricated by using a solution method. Current–voltage (I–V) curves for the devices under dual positive bias voltage sweeps show that the conductance with a pinched hysteresis gradually increased with increasing applied voltage, and those for the devices under dual negative bias voltage sweeps gradually decreased with increasing applied voltage, indicative of the fingerprint of e-synapses. The current in the devices decreases with increasing concentration of GQDs in the active layer, and the devices fabricated utilizing the ratio of PEDOT:PSS to GQDs of 1:0.4 shows the best performance among the e-synapses. The carrier transport and operating mechanisms of the e-synapses are described on the basis of both the I–V results and the trapping and escape of electrons from the GQDs.
Highlights
The fabrication of bio-inspired, cognitive, adaptive solid-state devices, which form the basis for synaptic electronics, a field of research aiming to build artificial synaptic devices to emulate the neuromorphic computation utilizing biological synapses, has been investigated extensively.[1,2,3,4] Synapses dominate the structure of the brain, and they are responsible for the massive parallelism, structural plasticity and robustness of the brain
This paper reports data for the pinched hystereses and the operating mechanisms of organic e-synapses based on PEDOT:PSS/graphene quantum dots (GQDs) nanocomposites as an active layer
The PEDOT:PSS/GQD active layer was uniformly deposited on the ITO bottom electrode
Summary
The fabrication of bio-inspired, cognitive, adaptive solid-state devices, which form the basis for synaptic electronics, a field of research aiming to build artificial synaptic devices to emulate the neuromorphic computation utilizing biological synapses, has been investigated extensively.[1,2,3,4] Synapses dominate the structure of the brain, and they are responsible for the massive parallelism, structural plasticity and robustness of the brain. Various kinds of device systems with programmable conductance inspired by existing device technologies, such as phasechange memories, resistive-change memories, ferroelectric switches, carbon-nanotube devices, and three-terminal devices or field-effecttransistor-based devices, have been explored Among those types of programmable memory devices, resistive switching devices, due to their simple structures, are currently the best candidates for realizing the function of the synapses.[5,6]. Resistive switching devices provide potential capabilities both to change the Si-based computing industry in the fields of logic and analog nonvolatile memories and to play an important role in biologically inspired structures, including electronic synapses and neuromorphic integrated circuits.[7,8,9,10] Resistive switching materials significantly affect the electrical characteristics of the devices. The carrier transport and operating mechanisms of the e-synapses were described on the basis of the I–V results and the carrier transport processes in the energy band diagram
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