Abstract
The formation of gold nanocontacts was performed using a pulsed electrochemical plating technique. The effect of various plating variables on the surface roughness of the plated electrodes was studied in the high frequency regime where the reduction reaction of gold complex becomes the bottleneck process. We demonstrated the selective contact formation of single wall carbon nanotube network field effect transistors (FETs) with this technique. The fabricated FETs exhibit usual p-type behavior with the performance comparable to usual network FETs.
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