Organic crystal light-emitting transistors combined with a metal oxide layer

Abstract

We improved organic light-emitting transistors (OLETs) characterized by aluminum-doped zinc oxide (AZO) layer insertion between organic and gate insulator layers using organic oligomer semiconductor crystals. (i) To ensure firm contact between the crystal and the AZO layer, we shaped the AZO layer into a rectangle (250 × 500 µm2) and covered it with a vapor-phase-grown crystal. (ii) To enhance contact between the crystal and the AZO layer, we placed the crystal used as a mask on the patternless AZO layer and etched parts of AZO not covered with the crystal with hydrochloric acid vapor. We completed OLETs by forming electron- and hole-injection contacts on the crystal. We modified these contacts with an oxide and/or a carbonate. The devices showed bright light emission from the part of the crystal sandwiched between the electron- and hole-injection contacts located on the AZO layer.