Abstract

AbstractThe development of organic field‐effect transistor (OFET) based sensors is in high demand for flexible electronics. Herein, a new and feasible procedure to grow donor‐acceptor complex microstructures sandwiched between the semiconducting and insulating layers is reported. To realize a well‐distributed, uniform‐sized structure through coating on the gold patterned substrate, the dopping ratio of the organic donor‐acceptor complex in the host polymer is optimized. This method leads to one‐step fabrication of high‐performance semiconductor thin‐films and a microstructured binary system attached to it via successful phase separation. The OFET sensors prepared by this technique demonstrate ideal hole‐transport properties and good pressure response. In addition, the thermal‐sensitivity is also revealed, which enables the device architectures to be multifunctional. This work opens a new avenue to manufacture functional microstructure and flexible OFET based pressure sensors.

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