Abstract
Current-voltage measurements on the Al/[CdSe∕ZnS nanoparticles embedded in a hole-transporting poly(N-vinylcarbazole) (PVK) layer]/indium tin oxide (ITO)/glass structures at 300K showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the Al/[CdSe∕ZnS nanoparticles embedded in a PVK layer]/ITO/glass structures at 300K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the CdSe∕ZnS nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the CdSe nanoparticles. Operating mechanisms for the Al/[CdSe∕ZnS nanoparticles embedded in the PVK layer]/ITO/glass devices are described on the basis of the C-V results.
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