Ordering of Si atoms on the ten-fold surface of the decagonal Al 72Ni 11Co 17 quasicrystal

Abstract

The deposition of Si at room temperature on the ten-fold quasicrystalline surface of d-Al–Ni–Co has been investigated by scanning tunnelling microscopy. At a coverage of 0.30 ML, Si pentagons in two orientations related by inversion symmetry are observed on the same substrate terrace. The side-length of the pentagons is 4.2 ± 0.2 Å. At this coverage, the Si adlayer displays quasiperiodic order. Depressions related to pentagonal features observed in STM images of the clean d-Al–Ni–Co substrate are proposed as plausible adsorption sites for the Si adatoms. As the Si coverage is increased, the well-defined structures observed are no longer distinguishable. At coverages above the monolayer, the Si overlayer follows a rough three-dimensional growth mode.