Abstract
Aspects of the kinetics of ordering at surfaces are briefly reviewed, including discussions of the growth law and diffusion in a nonequilibrium environment both for phase coexistence and for single stable phases. Examples of two-dimensional ordering are given, including a low-energy electron diffraction study of O/ W(110) and a scanning tunneling microscopy (STM) study of the initial stages of growth of Si on Si(001). Ordering kinetics involving the third dimension are illustrated, with an STM study of step bunching on vicinal Si(111) and model calculations using rate equations for A-on-A epitaxial growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
