Abstract
We reported a metal-assisted chemical etching approach to manufacture well-aligned silicon nanowires (SiNWs). Highly ordered gold (Au) mesh was achieved via vacuum evaporation on anodized aluminum oxide (AAO). It was revealed that the diameter and length of SiNWs could be controlled by adjusting the size of holes in Au mesh and etching duration, respectively. We found that the SiNWs fabricated by etching for 5min were vertically oriented to form an array, while longer etching duration led to bunched SiNWs. The resulting SiNWs, which exhibited smooth side walls, uniform diameter, and high aspect ratio, were proved to grow along the [100] crystal direction of silicon.
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