Abstract
Undercut or fully released silicon template layers of ultrathin silicon-on-insulator are structurally compliant and allow long- range mechanical interactions that are impossible on supported SOI, thick SOI, or on bulk surfaces. SiGe quantum dots create and respond to strain in these freestanding Si substrates. We show that elastic effects lead to long-range order in the positions of quantum dots grown on both sides of a free- standing thin SOI substrate. A statistical analysis of the distribution of quantum dots shows that the ordered lattice of dots is coherent over distances of at least several hundred of nanometers. X-ray microdiffraction probes the structure of the SOI and finds that curvature in the Si lattice is consistent with the proposed deformation of the substrate by quantum dots.
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