Abstract
GaAs (001) substrates are patterned by electron beam lithographyand wet chemical etching to control the nucleation of InAs quantum dots(QDs). InAs dots are grown on the stripe-patterned substrates by solidsource molecular beam epitaxy. A thick buffer layer is deposited on thestrip pattern before the deposition of InAs. To enhance the surfacediffusion length of the In atoms, InAs is deposited with low growthrate and low As pressure. The AFM images show that distinctone-dimensionally ordered InAs QDs with homogeneous size distribution arecreated, and the QDs preferentially nucleate along the trench. With theincreasing amount of deposited InAs and the spacing of the trenches, anumber of QDs are formed beside the trenches increased. Thedistribution of additional QDs is long-range ordered, always along thetrench rather than across the spacing regions.
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