Abstract
An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.PACS code1·PACS code2·moreMathematics Subject Classification (2000) MSC code1·MSC code2·more
Highlights
Ordered silicon-based nanostructures have attracted considerable attentions due to their potential applications in various novel devices including field-emission displays [1], nanoelectronic and nanophotonic devices [2,3,4]
quantum dots (QDs) can scarcely transform into nanorings when a thin Si capping layer is deposited, which is similar to the case of very high QD density [23]
When 200 nm PS nanospheres are used, the reactive iron etching (RIE) process is not necessary to modify the PS nanospheres, for the resulting lateral size of the pits is about 100 nm, which is comparable with the size of QDs
Summary
Ordered silicon-based nanostructures have attracted considerable attentions due to their potential applications in various novel devices including field-emission displays [1], nanoelectronic and nanophotonic devices [2,3,4]. We explored the growth of long-range ordered GeSi nanorings on patterned Si (001) substrates by molecular beam epitaxy (MBE). Ordered inverted pyramid-like pits with {111} facets arranged in a hexagonal lattice on Si (001) substrates were fabricated by NSL and reactive iron etching (RIE) technology.
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