Abstract
In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of recombination between electrons and holes. Due to the dramatic increase of hole carrier injection efficiency in RGO LB layer, the device luminance performance is greatly enhanced comparable to devices fabricated with spin-coating RGO and a commercial conducting polymer PEDOT:PSS as the hole transport layer. Furthermore, our results indicate that RGO LB films could be an excellent alternative to commercial PEDOT:PSS as the effective hole transport and electron blocking layer in light-emitting diode devices.
Highlights
The two-dimensional (2D) single-layer carbon material, graphene, has emerged as a rising star in the field of materials [1]
The results reveal that the thermal treatment does not lead to distinct morphology change, and the reduced graphene oxide (RGO) sheets obtained from graphene oxide (GO) LB films keep the ordered and compact formation
An investigation of surface roughness characterized by atomic force microscopy (AFM) indicates that LB deposition of RGO on indium tin oxide (ITO) gives rise to the surface roughness decrease of ITO
Summary
The two-dimensional (2D) single-layer carbon material, graphene, has emerged as a rising star in the field of materials [1]. Owing to its unique electrical, chemical, and mechanical properties [2], graphene has been developed for various applications in optoelectronics [3], sensors [4,5], and electrochemistry [6,7]. Many studies on graphene-based photovoltaic applications have been carried out, in which graphene was used as active layer materials, electron transport bridges, and transparent electrodes [8,9,10]. As the surging interest in graphene-based materials, graphene oxide (GO) has regained significant attention as a solution-processable precursor for bulk production of graphene used on transparent conductors and supercapacitors [13]. The reduced graphene oxide (RGO) can be obtained by reducing GO through chemical and thermal treatment [14]. It has been demonstrated that RGO exhibits high mechanical strength, as well as
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