Abstract
We report results from an investigation into hidden anisotropy in pure fully-dense amorphous silicon. For amorphous silicon in intimate contact with a crystalline Si(001) substrate, one can reasonably expect that the interface with the substrate may impose anisotropy in the form of distorted ordering within the film. Indeed, we found four-fold periodic intensity variations, with bimodal intensity centered along the substrate c-Si < 110> directions, in the X-ray scattering from a-Si on Si(001). These well-defined intensity variations disappeared entirely in X-ray scattering from edge-supported a-Si films, where there was no detectable anisotropy.
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