Abstract
We report on the circular and linear photogalvanic effects caused by free-carrier absorptionof terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces.The photocurrent behaviour upon variation of the radiation polarization state,wavelength, gate voltage, and temperature is studied. We present the microscopic andphenomenological theory of the photogalvanic effects, which describes well the experimentalresults. In particular, it is demonstrated that the circular (photon-helicity sensitive)photocurrent in silicon-based structures is of pure orbital nature originating from thequantum interference of different pathways contributing to the absorption ofmonochromatic radiation.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
