Abstract
We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry
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