Abstract
Whispering gallery mode (WGM) resonators have been extensively studied in optical range, however, they still have great research potential in terahertz (THz) domain. In this paper, the electric-field distribution of ~0.46 THz in high resistivity float zone silicon (HRFZ-Si) microring resonator was analyzed. By simulating the instantaneous heat dissipation process, thermal relaxation time was obtained which characterizes how fast the heat transfer from mode volume to the substrate. Furthermore, the optothermal dynamics within the resonator was depicted by an ordinary differential equation where both the linear absorption and the nonlinear Kerr effect were accounted. A series of transmission spectra under various input power were simulated. The results showed that unlike the case of optical regime, THz WGM exhibits obvious broadening under high injection power (over 80 mW) due to the relatively high absorption. The study will promote the understanding of interaction between THz wave and matter.
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