Abstract
The microstructural, and opto-electrical characteristics of Ge-doped antimony selenide alloys with the chemical composition Sb65Se35-xGex (0 ≤ x ≤ 20) which prepared by the melt quenching method have been studied here. In all of the investigated samples, structural studies using an X-ray diffraction pattern verified the polycrystalline nature with a simple characteristic peak of Sb2Se hexagonal rhombohedral phase. FE-SEM equipped with EDS was used to explore the morphology and composition of the samples. Raman spectra show a small shift in wave number with the addition of dopant, which could be due to lattice distortion. Electrical conductivity results demonstrate that the samples are degenerate semiconductors. The Eopt of Ge-doped Sb65Se35 alloys was derived using the KM function from DR spectra, and it changed as the Ge ion concentration rises. Ge-doped Sb65Se35 alloys have an optical band gap in the visible sector, making them a potential material for optoelectronic data storage applications.
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