Abstract
In this work, ZnONPs/Si Heterojunction Photo detector was prepared by a drop costing process of Zinc Oxide (ZnO) nanomaterial formation via laser ablation in the water on silicon (Si) substrate. The properties were investigated using SEM and UV spectroscopy. SEM investigation showed that nanoparticles having a spherical shape with few aggregations. The transmission result of ZnO nanoparticles exhibits a high transmission over - 300nm with a bandgap of about 3.8eV. For the optoelectronic devices, a ZnONPs/Si heterojunction photodetector is fabricated by drop-casting colloidal ZnO nanoparticles on the silicon wafer. The Heterostructure Photodetector has a good IV property with high spectral responsivity at the UV region, which found the best value is 0.43 A/W @ 320 nm.
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