Abstract
Herein, we report the optoelectronic properties of hybrid diodes fabricated using vanadyl phthalocyanine (VOPc) and zinc oxide nanorods (ZNR) with the configuration: ITO/ZNR/VOPc/MoO3/Al. Vertically aligned ZnO nanorods were grown using a simple aqueous solution (AS) method as a function of growth temperature. The correlation between the morphology of ZNR films and the optoelectronic properties of the ZNR/VOPc hybrid devices was investigated. The results show that the hybrid diodes with ZNR films grown at 120 °C offer the best optoelectronic properties. The higher photocurrent responsivity, Rph, (16.28 A/W) was achieved for devices with ZNR films grown at 120 °C. This value is 25 times higher than the Rph value obtained for the devices made with ZnO nanoparticle films that were reported earlier.
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