Optoelectronic properties of GaAs1−xPx alloys under the influence of temperature and pressure

Abstract

This work is concerned with the dependence of the electronic energy band structures for GaAs1−xPx alloys on temperature and pressure that is based on local empirical pseudo-potential method. The band structures of GaAs1−xPx alloys were calculated in the virtual crystal approximation using the EPM which incorporates compositional disorder as an effective potential.It was found that temperature and pressure dramatically change the crossover energies, refractive index and dielectric constant of the alloys.The calculated energy band gaps, bowing parameters, refractive indices, and dielectric constants of GaAs1−xPx alloys with different phosphide concentrations are found in close agreement with the published data.Therefore it can be stated that the temperature and pressure are highly significant when studying and operating devices based on GaAs1−xPx alloys.