Abstract
The Co/pentacene/n-Si/Al device with the Co/n-Si/Al device was fabricated and characterized by current-voltage measurements to understand the effect of the pentacene on electrical properties. The Co/pentacene/n-Si/Al device exhibited better rectification properties than reference device. The characteristic parameters such as barrier height, ideality factor, interface states density and series resistance values of the devices were calculated and discussed in details. Furthermore, I–V measurements of the Co/pentacene/n-Si/Al device were performed both in dark and under illumination conditions. The results revealed that the reverse current increased with increasing illumination intensity, and the device exhibited photodiode behaviors as well as good photocunducting characteristics. The C–V characteristics of the Co/pentacene/n-Si/Al were studied for various frequencies to determine the donor carrier concentration and fermi energy level. Experimental results highlights that the Co/pentacene/n-Si/Al device is a good candidate for optoelectronic device applications such as solar cells, photodiode, photodetector due to exhibiting good photoconducting characteristics.
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