Abstract
Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoWS nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.
Highlights
Within 2D materials, layered transition metal dichalcogenide (TMD) semiconductors of the TX2 type have attracted an important amount of research interest [5,6], given their interesting properties when it comes to optoelectronics [7,8,9,10,11], excitonics [11,12,13,14,15] and catalysis [16,17,18,19,20,21,22,23,24]
Mox W(1− x) S2 single crystals have been synthesised by means of chemical vapor transport (CVT), as done in previous works [48,70,71,72,81]
In order to better interpret the gathered EEL spectra in these alloys, it is important to delve deeper into their optoelectronic properties
Summary
Thin two-dimensional (2D) materials have been on the spotlight of modern research ever since the isolation of graphene in 2004 [1]. This ample interest comes for the most part from their appealing electronic, thermal and mechanic properties among others; as well as a vast number of potential and real applications [2,3,4]. Within 2D materials, layered transition metal dichalcogenide (TMD) semiconductors of the TX2 type (with T being a transition metal and X being a chalcogen) have attracted an important amount of research interest [5,6], given their interesting properties when it comes to optoelectronics [7,8,9,10,11], excitonics [11,12,13,14,15] and catalysis [16,17,18,19,20,21,22,23,24]
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