Abstract
In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film’s optoelectronic properties as well as the film’s electrical stability were investigated. The results showed that the film’s crystallinity degraded with increasing Ga content. The film’s conductivity was first enhanced due to the replacement of Zn2+ by Ga3+ before decreasing due to the separation of neutralized gallium atoms from the ZnO lattice. When the Ga content increased to 15.52 at %, the film’s conductivity improved again. Furthermore, all films presented an average transmittance exceeding 80% in the visible region. Regarding the film’s electrical stability, GZO thermally treated below 200 °C exhibited no significant deterioration in electrical properties, but such treatment over 200 °C greatly reduced the film’s conductivity. In normal atmospheric conditions, the conductivity of GZO films remained very stable at ambient temperature for more than 240 days.
Highlights
Transparent conductive oxides (TCOs) have been widely studied in the last few decades due to their high electrical conductivity and good optical transmittance in the visible light region
The influence of the sputtering power applied to the Ga2 O3 target (PGa2O3 ) on the variation in
The influence of the sputtering power applied to the Ga2O3 target (PGa2O3) on the variation in Ga
Summary
Transparent conductive oxides (TCOs) have been widely studied in the last few decades due to their high electrical conductivity and good optical transmittance in the visible light region. ZnO-based oxides are considered one of the most promising transparent conductive oxides due to their low production cost, non-toxicity, low growth temperature, and high adaptability to various substrates [11,12,13,14,15,16]. Their practical feasibility is strongly restricted by the poor electrical properties of intrinsic ZnO thin films. One approach is to enhance the electrical and optical properties of ZnO thin films by trivalent Ga doping [17,18,19,20,21]
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