Abstract
GaAs materials are widely used in plenty of fields such as field-effect transistors, lasers, photodetectors, etc. However, the electronic state structure of p-type dopant acceptor is much more complicated than that of n-type. In our experiments, we choose the element Be as the dopant acceptor. The doping concentration of the N-type GaAs thin film layer achieved 2.07 × 1018 cm−3 with a mobility of 2097 cm2/V.s at 1250 °C for the Si doping source, and the doping concentration of the P-type GaAs thin film reached 1.29 × 1017cm−3 with a mobility of 255.6 cm2/V.s at 800 °C for the Be doping source.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
