Abstract
The use of the photothermal deflection (PD) technique for the characterization of semiconductors is investigated by measurements on crystalline silicon and CdS. The influence of the absorption profile and recombination at the back side is involved in the theoretical description and compared with experimental results. It is shown that reliable values for the electronic transport parameters can be determined. PD signals are relatively specific and enable one to assess the suitability of electronic transport models. The presence of nonlinear surface recombination due to space-charge fields can be deduced from the measurements of the deflection signal. Also, the inadequacy of linear volume recombination as a description for excess carrier decay in CdS is clearly observed.
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