Abstract
For the full benefit of the silicon chip industry and to further shift the photoresponse cut-off wavelength of the silicon photodetectors, high-performance Ag-doped Si p-n photodiodes with an extended infrared photoresponsivity are constructed on the bulk silicon wafer by a facile thermal diffusion process at 550 °C for different annealing periods of 5, 10, and 15 minutes under an argon atmosphere. These Si-compatible p-n photodiodes revealed an obvious zero-bias room temperature photoresponsivity with a threshold photon energy at a longer wavelength compared to the photoresponsivity cut-off wavelength of the commercial Si photodiode of the Hamamatsu Photonics Co (model: S2281/-04). The photoresponsivity has decreased with the annealing time increase however; the detectivity has been improved by the significant drop in leakage current and noise power. The outcomes indicate that this study paves the way for developing cost-effective Si-compatible p-n junction photodiodes, with an obvious zero-biased room-temperature photoresponsivity of a comparable intensity and longer cut-off wavelength compared to the commercial Hamamatsu Si photodiode.
Highlights
Infrared photodetectors have been widely used for various commercial applications in security and safety, telecommunication, biomedicine, automotive night vision system and green energy generation.[1,2,3,4,5] Silicon-based photodetectors are the spotlight of current investigations due to their cost-effectiveness, and compatibility for the development of mature chip complementary metal-oxidesemiconductor (CMOS) photonics
The outcomes indicate that this study paves the way for developing cost-effective Si-compatible p-n junction photodiodes, with an obvious zero-biased room-temperature photoresponsivity of a comparable intensity and longer cut-off wavelength compared to the commercial Hamamatsu Si photodiode
Deep-level dopants such as titanium, gold, sulfur, and selenium form deep energy levels within the silicon band gap leading to generation of charge carriers via absorption of photons with energies lower than the Si band gap result in extending the room temperature infrared responsivity of the current Si photodiodes beyond 1100 nm.[3,4,14,16,17]
Summary
Infrared photodetectors have been widely used for various commercial applications in security and safety, telecommunication, biomedicine, automotive night vision system and green energy generation.[1,2,3,4,5] Silicon-based photodetectors are the spotlight of current investigations due to their cost-effectiveness, and compatibility for the development of mature chip complementary metal-oxidesemiconductor (CMOS) photonics. Thermal diffusion of Ag into n-type semiconductors has recently attracted increasing area of research as an important technique for facilitating their potential applications in IR photodiodes.[18–23]. In this context, we report our results on the realization of a cost-effective Ag-doped Si-compatible p-n photodiode prepared by facile thermal diffusion process. This study offers huge potentials to develop highperformance silicon-compatible photodiodes for efficiently sensing the short-wave infrared light in the wavelength domain from 0.8 down to 1.3 μm
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