Abstract
To improve the electroluminescence (EL) properties of the a-SiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency, a thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p+-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300 cd/m2 at an injection current density of 600 mA/cm2, and its EL threshold voltage was 14 V.
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